An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory

We demonstrate a novel phase change memory cell utilizing doped Ge nanowire pn-junction diode both as a bottom electrode and a memory cell selection device. This memory cell can be used for a cross-point memory array with diode selection. Using selective growth of isolated vertical nanowires in each cell, we have minimized the contact area below the lithography limit. A very low SET programming current of 10´s of muA was achieved. RESET/SET resistance ratio of 100x was obtained. The diode provides 100x isolation between forward and reverse bias in the SET state.