Enhanced Performance of Strained CMOSFETs Using Metallized Source/Drain Extension (M-SDE)

We have demonstrated successfully the integration scheme of metallized source/drain extension (M-SDE) with state-of-the-art strained-Si technique. Drain currents of N-FET (L_gate = 40 nm) and P-FET (L_gate = 35 nm) with M-SDE can achieve 1620 muA/mum and 755 muA/mum at |V_G-V_t| = |V_D| = 1V, respectively. Superior characteristics of junction leakage and source/drain series resistance are also presented. For M-SDE CMOSFETs, the capability of exploiting strain more efficiently is corroborated by the improved stress sensitivity of linear drain current to mechanical stress. M-SDE CMOSFETs exhibit higher stress sensitivity as scaling the gate length.