Analysis of silicon carbide power device performance

Author

Bhatnagar, M. ; Baliga, B.J.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1991

fDate

22-24 Apr 1991

Firstpage

176

Lastpage

180

Abstract

The authors attempt to define the drift region properties of SiC based rectifiers and MOSFETs to achieve breakdown voltages ranging from 50 to 5000 V. Using these values, the output characteristics of these devices have been calculated. It has been found that 5000-V SiC Schottky rectifiers and power MOSFETs would operate with a forward drop of less than 2 V due to the very low drift region resistance. This value is superior to that for silicon P-i-N rectifiers and gate-turn-off thyristors

Keywords

Schottky-barrier diodes; insulated gate field effect transistors; power transistors; semiconductor materials; silicon compounds; solid-state rectifiers; 50 to 5000 V; MOSFETs; Schottky rectifiers; SiC based rectifiers; breakdown voltages; drift region properties; drift region resistance; output characteristics; power device performance; Aerospace materials; Electron mobility; MOSFETs; Performance analysis; Power supplies; Rectifiers; Semiconductor materials; Silicon carbide; Switches; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146093

Filename

146093