DocumentCode :
3485815
Title :
Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
Author :
Barral, V. ; Poiroux, T. ; Rochette, F. ; Vinet, M. ; Barraud, S. ; Faynot, O. ; Tosti, L. ; Andrieu, F. ; Casse, M. ; Previtali, B. ; Ritzenthaler, R. ; Grosgeorges, P. ; Bernard, E. ; LeCarval, G. ; Munteanu, D. ; Autran, J.L. ; Deleonibus, S.
Author_Institution :
CEA/LETI MINATEC, Grenoble
fYear :
2007
fDate :
12-14 June 2007
Firstpage :
128
Lastpage :
129
Abstract :
For the first time, we have extracted the ballisticity rates of strained and unstrained n-fully depleted silicon on insulator devices with gate lengths down to 10 nm. Thanks to a new fully experimental extraction methodology taking into account multi-subband population, we demonstrate that strain takes actively part in quasi-ballistic drain current improvement thanks to a 22% injection velocity enhancement, which will become the predominant transport parameter for the next generation of CMOS devices. In addition, we find that strained channel ballisticity rates are slightly greater than unstrained ones whatever the considered temperature and gate length. This rate improvement can be closely related to the mobility gain for short channel architectures.
Keywords :
CMOS integrated circuits; silicon-on-insulator; transistors; CMOS devices; channel ballisticity rates; injection velocity enhancement; n-fully depleted silicon on insulator devices; quasi-ballistic FDSOI devices; quasiballistic drain current; size 10 nm; transistor; Backscatter; Capacitive sensors; Electrostatics; Intrusion detection; MOSFETs; Silicon on insulator technology; Strain control; Temperature; Tensile strain; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
Type :
conf
DOI :
10.1109/VLSIT.2007.4339754
Filename :
4339754
Link To Document :
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