High-Field Electron Mobility in Biaxially-tensile Strained SOI: Low Temperature Measurement and Correlation with the Surface Morphology

Author

Bonno, O. ; Barraud, S. ; Andrieu, F. ; Mariolle, D. ; Rochette, F. ; Cassé, M. ; Hartmann, J.-M. ; Bertin, F. ; Faynot, O.

Author_Institution

CEA/LETI Minatec, Grenoble

fYear

2007

fDate

12-14 June 2007

Firstpage

134

Lastpage

135

Abstract

The high field mobility enhancement in sSOI devices is still unexplained as for now. This work proposes an experimental and theoretical investigation of the physical mechanisms responsible for such a gain. For the first time, we show by atomic force microscopy (AFM) measurements that the surface roughness of sSi is drastically reduced compared to unstrained Si. Introduced into a Kubo-Greenwood model, this improved roughness perfectly reproduces the experimental mobility enhancement at high effective fields (ges1 MV/cm) for a wide range of temperature (50 K-300 K).

Keywords

atomic force microscopy; electron mobility; silicon-on-insulator; surface roughness; AFM; Kubo-Greenwood model; atomic force microscopy measurements; biaxially-tensile strained SOI; high-field electron mobility; surface morphology; surface roughness; Atomic force microscopy; Atomic measurements; Electron mobility; Force measurement; Rough surfaces; Surface morphology; Surface roughness; Temperature distribution; Temperature measurement; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339757

Filename

4339757