Title :
A V-band power amplifier in 0.13-um CMOS (invited paper)
Author :
Kuo, Jing-Lin ; Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
In this paper, a V-band CMOS power amplifier fabricated using 0.13-mum CMOS process is presented with a maximum output power of 14.3 dBm and a PidB of 11.2 dBm at 55 GHz. The linear gain is 15.5 dB, and the maximum PAE is 8 %.
Keywords :
CMOS integrated circuits; power amplifiers; CMOS process; V-band power amplifier; frequency 55 GHz; gain 15.5 dB; size 0.13 mum; CMOS process; CMOS technology; Circuit simulation; Gain; High power amplifiers; Power amplifiers; Power generation; Power measurement; Solid state circuits; Wireless personal area networks;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958262
