• DocumentCode
    3485920
  • Title

    A new high-performance CMOS-compatible reduced-area bipolar transistor

  • Author

    Emons, C.H.H. ; Hurloc, G.A.M. ; Pijpers, H.E.J. ; Peter, M.S. ; Koster, R. ; Slotboom, J.W.

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    44
  • Lastpage
    47
  • Abstract
    A CMOS-compatible single-poly bipolar transistor with implanted collector and minimised emitter-collector distance has been fabricated and characterised. This new concept features good transistor performance with high fT´s (22 GHz) and extremely low collector-substrate capacitances (5 fF) without the use of deep trench-isolation
  • Keywords
    bipolar transistors; ion implantation; 22 GHz; 5 fF; CMOS-compatible single-poly bipolar transistor; collector-substrate capacitance; cut-off frequency; emitter-collector distance; implanted collector; minimum area; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Capacitance; Contacts; Epitaxial growth; Implants; Isolation technology; Laboratories; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647352
  • Filename
    647352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485920