Gate First Metal-Aluminum-Nitride PMOS Electrodes for 32nm Low Standby Power Applications

Author

Wen, H.-C. ; Song, S.C. ; Park, C.S. ; Burham, C. ; Bersuker, G. ; Choi, K. ; Quevedo-Lopez, M.A. ; Ju, B.S. ; Alshareef, H.N. ; Niimi, H. ; Park, H.B. ; Lysaght, P.S. ; Majhi, P. ; Lee, B.H. ; Jammy, R.

Author_Institution

SEMATECH, Austin

fYear

2007

fDate

12-14 June 2007

Firstpage

160

Lastpage

161

Abstract

The effective work function (EWF) of ternary metal-aluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (~5 eV) by 250 meV compared to the EWF of the binary metal nitride. Low threshold voltage (V_t) of ~ -0.35 V, an equivalent oxide thickness (EOT)~1.2 nm, and performance suitable for gate-first 32 nm low standby power applications are demonstrated.

Keywords

MOSFET; aluminium compounds; dielectric materials; electrodes; Mo-Al-N; Ta-Al-N; Ti-Al-N; W-Al-N; binary metal nitride; gate first metal-aluminum-nitride PMOS electrodes; high-k dielectric gate stacks; low standby power applications; metal gate electrodes; size 32 nm; Annealing; Application software; Capacitors; Degradation; Dielectric devices; Electrodes; High K dielectric materials; High-K gate dielectrics; Niobium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339766

Filename

4339766