Source/drain profile engineering with plasma implantation

Author

Jones, Erin C. ; Cheung, Nathan W. ; Shao, Jiqun ; Denholm, A. Stuart

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

745

Lastpage

748

Abstract

Shallow junction profiles are controlled by the variable implant profile, implant damage profile and annealing cycle. For plasma immersion ion implantation (PIII) systems, the dopant and damage profiles vary with plasma source conditions and implanter waveforms. These can lead to different implant profiles for the same dose and energy, and different junction profiles after annealing. In the low energy regime, the as-implanted profiles resemble those from conventional implanters. In the Berkeley PIII system, a 55 nm p⁺ junction is formed by 1 kV BF₃ PIII implantation and a two-step rapid thermal annealing cycle

Keywords

doping profiles; ion implantation; rapid thermal annealing; 1 kV; BF₃; damage profile; dopant profile; plasma immersion ion implantation; rapid thermal annealing; shallow p⁺ junction; source/drain profile engineering; Annealing; Implants; Inductors; Ion implantation; Plasma accelerators; Plasma applications; Plasma immersion ion implantation; Plasma sheaths; Plasma sources; Plasma waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586544

Filename

586544