Title :
Source/drain profile engineering with plasma implantation
Author :
Jones, Erin C. ; Cheung, Nathan W. ; Shao, Jiqun ; Denholm, A. Stuart
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Shallow junction profiles are controlled by the variable implant profile, implant damage profile and annealing cycle. For plasma immersion ion implantation (PIII) systems, the dopant and damage profiles vary with plasma source conditions and implanter waveforms. These can lead to different implant profiles for the same dose and energy, and different junction profiles after annealing. In the low energy regime, the as-implanted profiles resemble those from conventional implanters. In the Berkeley PIII system, a 55 nm p+ junction is formed by 1 kV BF3 PIII implantation and a two-step rapid thermal annealing cycle
Keywords :
doping profiles; ion implantation; rapid thermal annealing; 1 kV; BF3; damage profile; dopant profile; plasma immersion ion implantation; rapid thermal annealing; shallow p+ junction; source/drain profile engineering; Annealing; Implants; Inductors; Ion implantation; Plasma accelerators; Plasma applications; Plasma immersion ion implantation; Plasma sheaths; Plasma sources; Plasma waves;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586544
