A 30 V complementary bipolar technology on SOI for high speed precision analog circuits

Author

Patel, Rupit ; Milan, W. ; Cooley, Greg ; Corsi, Marco ; Erdeljac, John ; Hutter, Louis

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1997

fDate

28-30 Sep 1997

Firstpage

48

Lastpage

50

Abstract

A complementary bipolar technology with full dielectric isolation merges 30 V capable polyemitter NPN and PNP transistors with capacitors, polysilicon resistors, Schottky diodes, and fuses. A 6000 V/μs slew rate, 400 MHz bandwidth current feedback operational amplifier has been implemented in this technology

Keywords

BiCMOS analogue integrated circuits; Schottky diodes; electric fuses; feedback amplifiers; isolation technology; operational amplifiers; silicon-on-insulator; 30 V; 400 MHz; SOI; Schottky diodes; Si; complementary bipolar technology; current feedback operational amplifier; full dielectric isolation; fuses; high speed precision analog circuits; polyemitter transistors; polysilicon resistors; slew rate; Analog circuits; Bandwidth; Capacitors; Dielectrics; Etching; Feedback; Fuses; Integrated circuit technology; Isolation technology; Operational amplifiers; Resistors; Schottky diodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647353

Filename

647353