Partial lifetime control in IGBT by helium irradiation through mask patterns

Author

Akiyama, Hajime ; Harada, Masana ; Kondoh, Hisao ; Akasaka, Yoichi

Author_Institution

Mitsubishi Electr. Corp., Itami, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

187

Lastpage

191

Abstract

Partial lifetime control for IGBTs (insulated-gate bipolar transistors) performed by irradiated helium ions through a stainless steel mask is studied. This control technique localizes the presence of carrier recombination centers in the lateral direction as well as in depth profile. Using this technique, one can obtain better trade-off curves between on-state voltage and turn-off loss compared with maskless irradiation. Turn-off loss is reduced to 41% of that in the case of maskless irradiation at the same on-state voltage

Keywords

carrier lifetime; insulated gate bipolar transistors; ion beam effects; masks; He ions; IGBTs; carrier recombination centers; depth profile; lateral direction; mask patterns; maskless irradiation; on-state voltage; partial lifetime control; stainless steel mask; turn-off loss; Charge carrier lifetime; Electrons; Helium; Insulated gate bipolar transistors; Large scale integration; Performance loss; Protons; Spontaneous emission; Steel; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146095

Filename

146095