• DocumentCode
    3486357
  • Title

    Ion implantation by plasma immersion technique

  • Author

    Thomae, R. ; Bender, Hugo ; Klein, H. ; Schafer, Jochen ; Seiler, Bettina

  • Author_Institution
    Inst. fur Angewandte Phys., Frankfurt Univ.
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    757
  • Lastpage
    759
  • Abstract
    Plasma immersion ion implantation (PIII) is technique for surface modification. In contrast to conventional ion implantation techniques the target is surrounded by the plasma and then pulse biased to high negative voltages. The plasma is generated in a rf source (13.56 MHz) and diffuses into the target processing chamber. In this paper we report on the influence of copper deposition effects on the implantation of oxygen and argon ions into a silicon target
  • Keywords
    elemental semiconductors; ion implantation; silicon; 13.56 MHz; Ar; Cu; O; RF source; Si; copper deposition; diffusion; plasma immersion ion implantation; silicon target; surface modification; Atomic measurements; Copper; Ion implantation; Plasma accelerators; Plasma immersion ion implantation; Plasma measurements; Plasma sheaths; Plasma sources; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586557
  • Filename
    586557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3486357