Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)

Author

Iyer, S. Sundar Kumar ; Lu, Xiang ; Liu, Jingbao ; Linder, Barry ; Hu, Chenming ; Cheung, Nathan W. ; Min, Jing ; Fan, Zhineng ; Chu, Paul

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

764

Lastpage

767

Abstract

SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications

Keywords

SIMOX; ion implantation; SOI wafer fabrication; SPIMOX; low-power IC; phase space; plasma immersion ion implantation; Costs; Implants; Ionization; Nuclear and plasma sciences; Oxygen; Plasma immersion ion implantation; Plasma materials processing; Silicon on insulator technology; Throughput; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586561

Filename

586561