Title :
An integrated silicon bipolar receiver subsystem for 900 MHz ISM band applications
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
A wide band dual conversion receiver subsystem is presented which is suitable for 900 MHz portable wireless applications including cordless telephone. The circuit features 118 dB of dynamic range and is operable from 6.5 V down through 2.7 V while consuming 28 mA. The receiver utilizes the MOSAICTM V RF silicon bipolar process and features an LNA, two mixers, two oscillators, second LO amplifier, dual modulus prescaler, IF amplifier, RSSI, coilless demodulator and power down control
Keywords :
UHF integrated circuits; bipolar analogue integrated circuits; cordless telephone systems; elemental semiconductors; mobile radio; radio receivers; silicon; 2.7 to 6.5 V; 28 mA; 900 MHz; IF amplifier; ISM band; LNA; LO amplifier; MOSAIC V; RF bipolar process; RSSI; Si; bipolar receiver subsystem; coilless demodulator; cordless telephone; dual conversion receiver; dual modulus prescaler; dynamic range; mixers; oscillators; portable wireless applications; power down control; Circuits; Demodulation; Dynamic range; Oscillators; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Telephony; Wideband;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647355
