• DocumentCode
    3486670
  • Title

    Reproducing power hysteresis with circuit envelope simulation

  • Author

    Yu Zhu ; Klimashov, Oleksey ; Bartle, Dylan

  • Author_Institution
    Skyworks Solutions Inc., Woburn, MA, USA
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Firstpage
    271
  • Lastpage
    273
  • Abstract
    Power collapse and related hysteresis have been observed for pHEMT switch in its on state when the input power is swept in a certain power range. The abnormal high power behavior can be explained in terms of self-heating and the temperature dependence of the device performance. By incorporating self-heating and temperature dependence into a simplified model, power collapse is reproduced in harmonic balance simulation. A novel simulation scheme is then proposed to simulate the power hysteresis. By representing the power sweep in the measurement with a time-varying power source, the power hysteresis has been successfully reproduced in circuit envelope simulation.
  • Keywords
    field effect transistor switches; high electron mobility transistors; hysteresis; semiconductor device models; circuit envelope simulation; device self-heating; harmonic balance simulation; pHEMT switch; power behavior; power collapse; power hysteresis reproduction; power sweep; simplified model; temperature dependence; time-varying power source; Harmonic analysis; Hysteresis; Integrated circuit modeling; PHEMTs; Power measurement; Power system harmonics; Temperature measurement; Circuit simulation; HEMT; device model; hysteresis; switch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    RF and Microwave Conference (RFM), 2013 IEEE International
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4799-2213-0
  • Type

    conf

  • DOI
    10.1109/RFM.2013.6757264
  • Filename
    6757264