Coplanar waveguides on gold-doped high resistivity silicon for 67-GHz microwave application

High resistivity handle wafers suitable for radio frequency integrated circuit application have been achieved through deep level doping compensation technique. Ion implantation and subsequent annealing were used to introduce electrically active gold atoms into silicon resulting in an increase in resistivity up to 70 kOhm-cm from a nominal value of 50 Ohm-cm. At 67GHz, attenuation loss for coplanar waveguides shows a strong reduction from 0.88 dB/mm obtained from un-implanted wafers to 0.3 dB/mm in gold-implanted wafers.