• DocumentCode
    3486748
  • Title

    SiGe 30GHz active inductor based on cascode gyrator

  • Author

    Torres, Jorge Alves ; Freire, João Costa

  • Author_Institution
    Inst. de Telecomun., Lisbon
  • fYear
    2008
  • fDate
    16-20 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A monolithic active inductor, to be used up to millimetre wave band lower edge, 30GHz, was implemented with a SiGe technology with 4 metal layers and HBTs with fT=120 GHz. The inductor has a Q greater then 30 on a 4.5GHz bandwidth. The inductance value can be as high as InH. Adjusting the bias conditions an inductance variation over 50% was measured.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC; active networks; gyrators; heterojunction bipolar transistors; inductors; HBT; SiGe; cascode gyrator; millimetre wave band lower edge; monolithic active inductor; Active inductors; Bandwidth; Capacitors; Germanium silicon alloys; Gyrators; Inductance; Q factor; Resonance; Resonant frequency; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008. APMC 2008. Asia-Pacific
  • Conference_Location
    Macau
  • Print_ISBN
    978-1-4244-2641-6
  • Electronic_ISBN
    978-1-4244-2642-3
  • Type

    conf

  • DOI
    10.1109/APMC.2008.4958305
  • Filename
    4958305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3486748