Statistics pattern analysis based virtual metrology for plasma etch processes

Virtual metrology (VM) is the prediction of end-of-batch properties (i.e., metrology data) using process variables and other information available for the process and/or the product (i.e., machine data) without physically conducting property measurement. VM (sometimes augmented with existing metrology) has been utilized in semiconductor process monitoring and control. Besides the economic benefit of replacing or reducing metrology tools, due to the instant availability of high frequency machine data, a good VM can actually provide better process monitoring and control performance compared to the same monitoring and control schemes based on the physical metrology data which often obtained at lower frequencies and usually with delays. In this paper, we propose a statistics pattern analysis (SPA) based VM approach for predicting sheet resistance using optical emission spectroscopy (OES) data. The advantageous properties of the SPA based VM are discussed. And the performance of the SPA based VM is compared with several commonly used VM algorithms in terms of prediction accuracy.