DocumentCode
3486865
Title
New developments in SDS gas source technology for ion implantation
Author
McManus, James V. ; Edwards, Doug ; Olander, W. Karl ; Kirk, Ralph ; Romig, Terry ; Shi, Jinghong
Author_Institution
Adv. Technol. Mater. Inc., Danbury, CT, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
804
Lastpage
807
Abstract
The safe delivery source (SDS) technology for the low pressure storage and dispensing of arsine and phosphine to ion implanters has been successfully demonstrated in the past two years. The improved safety and productivity enhancement of the SDS has rapidly accelerated its acceptance. Since then there has been a focus to extend and refine the technology based on input from the customer base. This paper discusses improvements in the SDS technology with respect to cylinder lifetime and cylinder shelf-life. Additional data is presented on SDS release rate studies
Keywords
gases; ion implantation; safety; AsH3; PH3; SDS gas source technology; arsine; cylinder lifetime; cylinder shelf-life; ion implantation; low pressure storage; phosphine; productivity; release rate; safe delivery source; safety; Atmosphere; Engine cylinders; Implants; Instruments; Ion implantation; Kirk field collapse effect; Molecular sieves; Productivity; Semiconductor materials; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586586
Filename
586586
Link To Document