• DocumentCode
    3486865
  • Title

    New developments in SDS gas source technology for ion implantation

  • Author

    McManus, James V. ; Edwards, Doug ; Olander, W. Karl ; Kirk, Ralph ; Romig, Terry ; Shi, Jinghong

  • Author_Institution
    Adv. Technol. Mater. Inc., Danbury, CT, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    804
  • Lastpage
    807
  • Abstract
    The safe delivery source (SDS) technology for the low pressure storage and dispensing of arsine and phosphine to ion implanters has been successfully demonstrated in the past two years. The improved safety and productivity enhancement of the SDS has rapidly accelerated its acceptance. Since then there has been a focus to extend and refine the technology based on input from the customer base. This paper discusses improvements in the SDS technology with respect to cylinder lifetime and cylinder shelf-life. Additional data is presented on SDS release rate studies
  • Keywords
    gases; ion implantation; safety; AsH3; PH3; SDS gas source technology; arsine; cylinder lifetime; cylinder shelf-life; ion implantation; low pressure storage; phosphine; productivity; release rate; safe delivery source; safety; Atmosphere; Engine cylinders; Implants; Instruments; Ion implantation; Kirk field collapse effect; Molecular sieves; Productivity; Semiconductor materials; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586586
  • Filename
    586586