Title :
Simulator for amplifier and transistor noise-parameter measurements
Author_Institution :
Phys. Dept., Univ. of Colorado at Boulder, Boulder, CO, USA
Abstract :
This paper describes a simulation program that was developed to compare the uncertainties that would be expected with different measurement strategies for the noise parameters of connectorized amplifiers and of amplifiers or transistors on wafers. Both type A and type B uncertainties are included. An illustrative example is given.
Keywords :
Monte Carlo methods; amplifiers; noise measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; transistors; Monte Carlo simulation program; amplifier simulator; connectorized amplifiers; transistor noise-parameter measurements; type A uncertainty; type B uncertainty; wafers; Acoustic reflection; Analytical models; Attenuation measurement; Computational modeling; Electromagnetic measurements; Monte Carlo methods; NIST; Noise measurement; Scattering parameters; Temperature measurement;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
DOI :
10.1109/CPEM.2010.5544823
