Title :
MBE growth of wide-gap II-VI laser materials-real-time in-situ monitoring of critical material properties
Author_Institution :
Florida Univ., Gainesville, FL, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. Techniques will be described involving electron and laser beam probes which can be applied to the real-time in-situ-monitoring of carrier concentrations in doped epilayers and defect formation due to lattice-mismatch during the MBE growth of wide-gap II-VI/GaAs heterostructures. Such properties are critical to the performance of wide-gap II-VI/GaAs light-emitting devices
Keywords :
molecular beam epitaxial growth; GaAs; GaAs heterostructures; MBE growth; carrier concentration; defect formation; doped epilayers; electron beam probes; laser beam probes; lattice-mismatch; light-emitting devices; real-time in-situ monitoring; wide-gap II-VI laser materials; Electron beams; Laser beams; Material properties; Molecular beam epitaxial growth; Monitoring; Optical materials; Probes;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586607
