DocumentCode
3487248
Title
MBE growth of wide-gap II-VI laser materials-real-time in-situ monitoring of critical material properties
Author
Park, R.M.
Author_Institution
Florida Univ., Gainesville, FL, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Abstract
Summary form only given. Techniques will be described involving electron and laser beam probes which can be applied to the real-time in-situ-monitoring of carrier concentrations in doped epilayers and defect formation due to lattice-mismatch during the MBE growth of wide-gap II-VI/GaAs heterostructures. Such properties are critical to the performance of wide-gap II-VI/GaAs light-emitting devices
Keywords
molecular beam epitaxial growth; GaAs; GaAs heterostructures; MBE growth; carrier concentration; defect formation; doped epilayers; electron beam probes; laser beam probes; lattice-mismatch; light-emitting devices; real-time in-situ monitoring; wide-gap II-VI laser materials; Electron beams; Laser beams; Material properties; Molecular beam epitaxial growth; Monitoring; Optical materials; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586607
Filename
586607
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