Title :
Recent advances of in-situ process in molecular beam epitaxy
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. In-situ process combines film growth and device fabrication steps which take place under an ultra high vacuum or a controlled ambient environment. Results of materials and devices produced using this technique with molecular beam epitaxy are reviewed
Keywords :
molecular beam epitaxial growth; controlled ambient environment; device fabrication; film growth; in-situ process; molecular beam epitaxy; ultra high vacuum; Fabrication; Molecular beam epitaxial growth;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586609
