Design of SPST/SPDT Switches in 65nm CMOS for 60GHz applications

This paper presents novel single-pole-single-throw (SPST) and single-pole-double-throw (SPDT) switches for 57-66 GHz band applications. At 60 GHz band, the SPST switch exhibits an insertion loss of 1.6 dB, a return loss of 16 dB, an isolation of 27 dB and an input 1-dB compression point (IP_1dB) of 11 dBm; Correspondingly, the SPDT switch achieves an insertion loss of 3 dB/2.5 dB, a return loss of 12.5 dB/12 dB, an isolation of 22 dB/22 dB and an input P1 dB of 12 dBm/13 dBm in the Tx/Rx mode, respectively. The switches are designed and implemented with STMicroelectronics 1.2 V 65 nm CMOS RF process.