Title :
Lasing properties of GaAs/AlGaAs lasers grown by MOVPE and bandgap-shifted by impurity free vacancy diffusion
Author :
Ayling, S.G. ; Bryce, A.C. ; Marsh, J.H. ; Roberts, J.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
31 Oct-3 Nov 1994
Abstract :
Bandgap shifting by impurity-free vacancy diffusion was investigated using carbon p-doped quantum well laser structures. Spectra and L-I characteristics were measured and compared with as-grown material confirming that high lasing efficiency was maintained
Keywords :
gallium arsenide; GaAs-AlGaAs; GaAs/AlGaAs lasers growth; IR spectra; L-I characteristics; MOVPE; as-grown material; bandgap shifting; bandgap-shifted; carbon p-doped quantum well laser structures; high lasing efficiency; impurity free vacancy diffusion; impurity-free vacancy diffusion; lasing properties; spectral properties; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Optical device fabrication; Optical materials; Photonic band gap; Quantum well lasers; Silicon; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586623
