• DocumentCode
    3487548
  • Title

    Overlay aware interconnect and timing variation modeling for Double Patterning Technology

  • Author

    Yang, Jae-seok ; Pan, David Z.

  • Author_Institution
    Dept. of ECE, Univ. of Texas at Austin, Austin, TX
  • fYear
    2008
  • fDate
    10-13 Nov. 2008
  • Firstpage
    488
  • Lastpage
    493
  • Abstract
    As double patterning technology (DPT) becomes the only solution for 32-nm lithography process, we need to investigate how DPT affects the performance of a chip. In this paper, we present an efficient modeling of timing variation with overlay which is inevitable for DPT. Our work makes it possible to analyze timing with overlay variables. Since the variation of metal space caused by overlay results in coupling capacitance variation, we first model metal spacing variation with individual overlay sources. Then, all overlay sources are considered to determine the worst timing with coupling capacitance variation. Non-parallel pattern caused by overlay is converted to parallel one with equivalent spacing having the same delay to be applicable of a traditional RC extraction flow. To verify our work, we use identical interconnects having different positions and different layout decompositions. Experimental result shows that the delay has a variation from 7.8% to 9.1% depending on their locations. The well decomposed structure shows only 2.7% delay variation.
  • Keywords
    delays; integrated circuit interconnections; integrated circuit modelling; lithography; RC extraction flow; coupling capacitance variation; delay variation; double patterning technology; lithography process; metal spacing variation modelling; nonparallel pattern; overlay aware interconnect; size 32 nm; timing variation modeling; Apertures; Capacitance; Conductors; Delay; Lenses; Light sources; Lithography; Shipbuilding industry; Throughput; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4244-2819-9
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2008.4681619
  • Filename
    4681619