DocumentCode
3487590
Title
High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering
Author
McKee, A. ; McLean, C.J. ; Bryce, A.C. ; Button, C. ; De La Rue, R.M. ; Marsh, J.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
381
Abstract
Oxide stripe lasers have been fabricated from GaInAs/GaInAsP multi-quantum well material which has undergone various degrees of intermixing by photoabsorption induced disordering (PAID). Blue shifts of up to 160 nm in the lasing spectra are demonstrated
Keywords
gallium arsenide; 160 nm; GaInAs-GaInAsP; GaInAs/GaInAsP multi-quantum well material; blue shifts; high quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabrication; intermixing; lasing spectra; oxide stripe lasers; photo-absorption induced disordering; Absorption; Fabrication; Indium phosphide; Laser tuning; Optical materials; Photonic band gap; Plasma temperature; Power lasers; Quantum well devices; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586626
Filename
586626
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