Title :
20-GHz, 20-dBm pseudo-differential power amplifier in standard 90-nm CMOS
Author :
Kawano, Yoichi ; Suzuki, Toshihide ; Sato, Masaru ; Nakasha, Yasuhiro ; Hirose, Tatsuya ; Hara, Naoki ; Joshin, Kazukiyo
Author_Institution :
Fujitsu Ltd., Atsugi
Abstract :
This paper presents a 20-GHz pseudo-differential power amplifier (PA) fabricated in a standard 90-nm Si-CMOS process. The pseudo-differential PA has a two-stage cascode configuration with differential input and output ports. Assuming the use of an off-chip transformer, the input impedance of each single PA is designed to be 6.25 Omega and the output impedance to be 25 Omega. The individual amplifier fabricated demonstrates a saturation power of 20 dBm with a linear gain of 18 dB at 20 GHz. The supply voltage is 2.4 V, and the chip size is 2.0 times 1.8 mm2.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; differential amplifiers; elemental semiconductors; field effect MMIC; integrated circuit design; nanoelectronics; silicon; CMOS process; Si; amplifier fabrication; frequency 20 GHz; gain 18 dB; off-chip transformer; pseudo-differential power amplifier design; size 90 nm; two-stage cascode configuration; voltage 2.4 V; CMOS process; Circuits; Costs; Gain; Impedance; Microwave devices; Millimeter wave technology; Millimeter wave transistors; Power amplifiers; Power generation;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958349
