Title :
Aiming for thresholdless semiconductor lasers: successful fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs
Author :
Krauss, T. ; Song, Y.P. ; Thoms, S. ; Wilkinson, C.D.W. ; DeLaRue, R.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
31 Oct-3 Nov 1994
Abstract :
We report the first realization of two-dimensional photonic bandgap structures with a period of λ0/2n in the GaAs/AlGaAs material system. We discuss the lithography and dry etching issues that are important for a successful device implementation of these results
Keywords :
gallium arsenide; 2D photonic bandgap structures; GaAs-AlGaAs; GaAs/AlGaAs; dry etching issues; lithography; thresholdless semiconductor lasers; Dry etching; Frequency; Lithography; Optical device fabrication; Photonic band gap; Photonic crystals; Semiconductor lasers; Shape control; Silicon compounds; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586631
