Title :
Applications of high power tapered gain region devices
Author :
Livas, J.C. ; Chinn, S.R. ; Kintzer, E.S. ; Walpole, J.N. ; Wang, C.A. ; Missaggia, L.J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
An important application of tapered gain region semiconductor lasers is as a pump source for erbium doped fiber amplifiers. We have been developing a 1 Watt-class erbium-doped transmitter amplifier for optical intersatellite communications. Previously, high power erbium-doped amplifiers have been demonstrated using erbium-ytterbium codoped fiber and Nd:YAG pumps, but this approach has a lower wall-plug efficiency than directly pumping at 980 nm. We will discuss recent high power EDFA results
Keywords :
semiconductor lasers; 1 W; 980 nm; directly pumping; erbium doped fiber amplifiers; erbium-doped transmitter amplifier; high power EDFA results; high power tapered gain region devices; optical intersatellite communications; pump source; tapered gain region semiconductor lasers; wall-plug efficiency; Doped fiber amplifiers; Erbium; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser excitation; Optical amplifiers; Optical transmitters; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586633
