Angled-facet high-power diffraction-limited tapered semiconductor amplifier

Author

Yeh, P.S. ; Lu, C.C. ; Merritt, S. ; Heim, P. ; Cho, S.H. ; Dauga, C. ; Fox, S. ; Wood, C.E.C. ; Dagenais, M.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

399

Abstract

Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction

Keywords

gallium arsenide; 809 nm; GaAs-AlGaAs; GaAs-AlGaAs QW semiconductor amplifier; angled-facet high-power diffraction-limited tapered quantum well lasers; angled-facet high-power diffraction-limited tapered semiconductor amplifier; high-power diffraction-limited emission; laser feedback; residual reflection; signal propagation direction; small angle; tapered semiconductor amplifiers; Coatings; Diffraction; Educational institutions; High power amplifiers; Optical amplifiers; Optical propagation; Power amplifiers; Power generation; Pulse amplifiers; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586635

Filename

586635