Title :
Ultra-low threshold 1.3 μm strained-layer quantum well lasers for interconnection
Author :
Wakao, Kiyohide ; Imai, Hajime
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
31 Oct-3 Nov 1994
Abstract :
Ultra-low threshold InGaAsP/InGaAsP strained-layer MQW lasers emitting at 1.3 μm and their zero-bias modulation characteristics are described. These low threshold lasers are promising as high-speed light sources for optical interconnections
Keywords :
quantum well lasers; 1.3 micron; InGaAsP-InGaAsP; high-speed light sources; optical interconnections; strained-layer MQW lasers; ultra-low threshold lasers; zero-bias modulation; Diode lasers; Driver circuits; Electrons; Integrated circuit interconnections; Laboratories; Optical modulation; Optimized production technology; Quantum well devices; Quantum well lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586637
