A Low-cost on-chip bias-current-control SiGe BiCMOS power amplifier at 2.4GHz

Author

Peng, Yan-Jun ; Song, Jia-You ; Wang, Zhi-Gong ; Tsang, K.F.

Author_Institution

Inst. of RF-& OE-ICs, Southeast Univ., Nanjing

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, a SiGe BiCMOS power amplifier has been designed, showing the competitive performance compared to GaAs HBT. The 2.4 GHz power amplifier realized in IBM 0.35 mum SiGe BiCMOS technology. As shown in Fig.5, under high power mode, the measured gain is 24 dB and the input return loss Sn is better than -15 dB, the output return loss S₂₂ is ~9.6 dB at 2.45 GHz. The PA exhibits PidB of 24.1 dBm with the peak power added efficiency of 35.1% (Fig.6) at 2.4 GHz range. The second and third harmonics are measured to be -40.2 dBc and - 51.2 dBc respectively.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; gallium arsenide; heterojunction bipolar transistors; power amplifiers; BiCMOS power amplifier; GaAs; HBT; SiGe; efficiency 35.1 percent; frequency 2.4 GHz; gain 24 dB; low-cost on-chip bias-current-control; size 0.35 mum; BiCMOS integrated circuits; Gain measurement; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Loss measurement; Power amplifiers; Power measurement; Silicon germanium; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958364

Filename

4958364