Title :
A CMOS SPDT switch
Author :
Wu, Jheng-Da ; Wu, Janne-Wha ; Tu, Chih-Ho ; Tang, Ching-Wen ; Lai, Chien-You ; Lai, Bing-Jiun ; Lai, Wei-Ju ; Chi, Liang-Yeh ; Juang, Ying-Zong
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Cheng Univ., Chiayi
Abstract :
In this work, a novel architecture with stacked-type CMOS device is presented. The reformed CMOS switch was implemented by the TSMC 0.18 um 1P6M standard CMOS process. In order to improve power handling capability and strengthen the isolation, the proposed circuit is inserted with an excess transistor adjacent to the receiver side. The insertion loss of the designed CMOS T/R switch is about 1.9plusmn0.3 dB. The isolation is greater than 25 dB and the power handling is capable of 28 dBm at 5.8 GHz.
Keywords :
CMOS integrated circuits; isolation technology; microwave switches; transistors; CMOS SPDT switch; CMOS T/R switch; CMOS switch; TSMC; excess transistor; insertion loss; isolation; power handling capability; stacked-type CMOS device; CMOS process; CMOS technology; Circuits; Immune system; Insertion loss; Loss measurement; Radio frequency; Radio transmitters; Semiconductor device measurement; Switches;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958365
