Title :
Capacitance modeling of 120nm AlGaN/GaN HEMT for microwave and high speed circuit applications
Author :
Gangwani, Parvesh ; Gupta, Mridula ; Kaur, Ravneet ; Pandey, Sujata ; Haldar, Subhasis ; Gupta, R.S.
Author_Institution :
Semicond. Devices Res. Lab., Univ. of Delhi, New Delhi
Abstract :
The capacitance-voltage(C-V) and switching characteristics of AlGaN/GaN HEMT has been calculated analytically. The device capacitances and switching parameters, which have been calculated, depends on the basic device parameters and terminal voltages which determine the microwave behavior of a device. The nonvariant nature of this device with drain voltage leads to better device choice for high power microwave frequency.
Keywords :
aluminium compounds; capacitance; gallium compounds; high electron mobility transistors; microwave transistors; AlGaN-GaN; HEMT; capacitance-voltage modelling; drain voltage; high speed circuit applications; microwave application; power microwave frequency; size 120 nm; switching parameters; Aluminum gallium nitride; Boundary conditions; Capacitance; Electrostatics; Gallium nitride; HEMTs; Laboratories; Microwave circuits; Microwave devices; Semiconductor devices;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958369
