DocumentCode :
3488092
Title :
A capacitance solver for incremental variation-aware extraction
Author :
El-Moselhy, Tarek A. ; Elfadel, Ibrahim M. ; Daniel, Luca
Author_Institution :
Res. Lab. in Electron., Massachusetts Inst. of Technol., Cambridge, MA
fYear :
2008
fDate :
10-13 Nov. 2008
Firstpage :
662
Lastpage :
669
Abstract :
Lithographic limitations and manufacturing uncertainties are resulting in fabricated shapes on wafer that are topologically equivalent, but geometrically different from the corresponding drawn shapes. While first-order sensitivity information can measure the change in pattern parasitics when the shape variations are small, there is still a need for a high-order algorithm that can extract parasitic variations incrementally in the presence of a large number of simultaneous shape variations. This paper proposes such an algorithm based on the wellknown method of floating random walk (FRW). Specifically, we formalize the notion of random path sharing between several conductors undergoing shape perturbations and use it as a basis of a fast capacitance sensitivity extraction algorithm and a fast incremental variational capacitance extraction algorithm. The efficiency of these algorithms is further improved with a novel FRW method for dealing with layered media. Our numerical examples show a 10X speed up with respect to the boundary-element method adjoint or finite-difference sensitivity extraction, and more than 560X speed up with respect to a non-incremental FRW method for a high-order variational extraction.
Keywords :
boundary-value problems; capacitance measurement; finite difference methods; perturbation theory; boundary-element method; capacitance; capacitance solver; extraction algorithm; finite-difference sensitivity extraction; floating random walk; high-order algorithm; incremental variation-aware extraction; layered media; lithography; pattern parasitics; random path sharing; shape perturbations; Computational complexity; Computational geometry; Conductors; Data mining; Finite difference methods; Parasitic capacitance; Random access memory; Recycling; Shape measurement; Stochastic resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4244-2819-9
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2008.4681647
Filename :
4681647
Link To Document :
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