Title :
A 1500 V IGBT with a self-aligned DMOS structure for high resolution CRT operated up to 100 kHz
Author :
Mori, Mutsuhiro ; Nakano, Yasunori ; Yasuda, Yasumichi ; Yatsuo, Tsutomu ; Sugawara, Yoshitaka
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Abstract :
The authors present a 1500 V insulated gate bipolar transistor (IGBT) with a self-aligned DMOS structure (SA-DMOS) using a phosphosilicate glass (PSG) sidewall for a horizontal deflection output transistor in a high-resolution CRT (cathode ray tube). The scaled-down MOS structure, such as the SA-DMOS with a 5 μm distance between the polysilicon gates, was useful for even a high blocking voltage IGBT to realize a low forward voltage drop and small turn-off loss. A 1500 V SA-DMOS IGBT having a chip size of 8×8 mm2, a forward voltage drop of 4.0 V at a forward current of 6 A, and a turn-off loss of 33 μJ has been fabricated. The power loss of the SA-DMOS IGBT was 2.5 times lower than that of a conventional power MOSFET at a high frequency of up to 100 kHz
Keywords :
cathode-ray tubes; insulated gate bipolar transistors; power transistors; 1500 V; 4.0 V; 6 A; P2O5-SiO2; PSG sidewall; blocking voltage; forward current; forward voltage drop; high resolution CRT; horizontal deflection output transistor; insulated gate bipolar transistor; polysilicon gates; power loss; scaled-down MOS structure; self-aligned DMOS structure; turn-off loss; Cathode ray tubes; Dry etching; Fabrication; Frequency; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power MOSFET; Pulse width modulation inverters; Switching loss;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146103
