A low-power subharmonic injection-locked oscillator using E/D-mode GaAs PHEMTs for Ka-band applications

Author

Huang, Fan-Hsiu ; Lin, Chi-Hsien ; Chang, Hong-Yeh ; Yi-Jen Chan

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A subharmonic injection-locked oscillator (SILO) implemented by using 0.5 mum E/D-mode PHEMT process is demonstrated to achieve a Ka-band low-power and low phase noise source in this paper. Based on a 15 GHz cross-coupled oscillator, a signal having the frequency around 30 GHz can be generated in this SILO circuit through the push-push technique. A cascode amplifier is also arranged to be the output buffer for gaining the output amplitude of 30 GHz signal. The total power consumption of SILO is 24.5 mW under 2.5 V supply voltage. The measured free-running phase noise is -101 dBc/Hz at 1 MHz offset. With injecting a 2nd-order sub-harmonic signal (7.5 GHz) into this ILO, the output phase noise can be further improved to -127 dBc/Hz. The overall frequency multiplication factor is 4.

Keywords

III-V semiconductors; gallium arsenide; injection locked oscillators; low-power electronics; power HEMT; E/D-mode PHEMT; GaAs; Ka-band applications; frequency 15 GHz; low phase noise; low power; output amplitude; power 24.5 mW; subharmonic injection locked oscillator; voltage 2.5 V; Circuits; Energy consumption; Frequency; Gallium arsenide; Injection-locked oscillators; Noise measurement; PHEMTs; Phase noise; Signal generators; Voltage measurement; E/D-mode GaAs PHEMT; Injection-Locked Oscillator; cascode amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958377

Filename

4958377