An approach for fabricating high performance inductors on low resistivity substrates

Author

Xie, Y.H. ; Frei, M.R. ; Becker, A.J. ; King, C.A. ; Kossives, D. ; Gomez, L.T. ; Theiss, S.K.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

28-30 Sep 1997

Firstpage

88

Lastpage

91

Abstract

Porous Si layers up to 250 μm in thickness are used to isolate spiral inductors from low resistivity substrates. Wafer curvature and SIMS analysis are done to address the manufacturability issue of porous Si. Spiral inductors with a single level Al on 2-inch, p-type substrates of 0.008 Ω-cm resistivity are demonstrated with Q=5.0 at 1.8 GHz for an L of 9 nH. Large inductors with L~150 nH have been shown with the first resonance frequency at 1 GHz. The expected performance potential as well as factors that could be limiting the Q are discussed

Keywords

Q-factor; elemental semiconductors; inductors; isolation technology; porous materials; secondary ion mass spectra; silicon; 0.008 ohmcm; 1 to 1.8 GHz; Al-Si; Q factor; SIMS analysis; fabrication; low resistivity substrate; porous Si isolation layer; resonance frequency; spiral inductor; wafer curvature; CMOS technology; Cathodes; Conductivity; Electrodes; Etching; Hafnium; Inductors; Manufacturing; Potential well; Radio frequency; Resonance; Resonant frequency; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647363

Filename

647363