• DocumentCode
    3488309
  • Title

    RF noise modeling of SiGe HBTs using four-port de-embedding method

  • Author

    Chen, Kun-Ming ; Chen, Han-Yu ; Huang, Guo-Wei ; Liao, Wen-Shiang ; Chang, Chun-Yen

  • Author_Institution
    Nat. Nano Device Labs., Hsinchu
  • fYear
    2008
  • fDate
    16-20 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A complete extraction technique of SiGe HBTs is developed to extract the base and collector current noises and their correlation. Unlike conventional methods, a four-port noise de- embedding technique is used to remove the influence of extrinsic elements. From the extraction results, we found that the base current noise and collector current noise can not be modeled well using 2qIB and 2qlc, respectively. By modifying the expressions of current noises, the noise performance of a SiGe HBT can be modeled more accurately.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; HBT; RF noise modeling; SiGe; current noises; four-port de-embedding method; Circuit noise; Data mining; Equivalent circuits; Germanium silicon alloys; Integrated circuit noise; Low-frequency noise; Noise figure; Radio frequency; Silicon carbide; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008. APMC 2008. Asia-Pacific
  • Conference_Location
    Macau
  • Print_ISBN
    978-1-4244-2641-6
  • Electronic_ISBN
    978-1-4244-2642-3
  • Type

    conf

  • DOI
    10.1109/APMC.2008.4958381
  • Filename
    4958381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3488309