Comparative analysis of InGaP/GaAs HBT differential Colpitts VCOs

Author

Shrestha, Bhanu ; Wang, Cong ; Kim, Nam-Young

Author_Institution

RFIC Center, Kwangwoon Univ., Seoul

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Two VCOs were fabricated and characterized for ICS application using InGaP/GaAs HBT technology. The cross coupled configuration achieved low phase noise of-130.3 dBc/Hz at 1 MHz offset from the carrier frequency (1.566 GHz), and the double cross coupled structure achieved excellent phase noise of-134.58 dBc/Hz at 1 MHz offset from the carrier frequency (1.630 GHz). Optimized feedback capacitors (CI and C2) ratio were used to improve wanted output wave form. The second VCO exhibited better characteristics when compared with the first one due to faster switching action and relaxation start-up state.

Keywords

III-VI semiconductors; capacitors; circuit feedback; gallium arsenide; heterojunction bipolar transistors; indium compounds; phase noise; voltage-controlled oscillators; HBT differential Colpitts VCO; InGaP-GaAs; carrier frequency; double cross coupled structure; frequency 1 MHz; heterojunction bipolar transistors; optimized feedback capacitors; phase noise; Capacitors; Coupling circuits; Feedback; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Phase noise; Power generation; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958382

Filename

4958382