DocumentCode
3488337
Title
A switch-mode power amplifier in GaAs enhancement-mode pHEMT for WiMAX/WLAN applications
Author
Wang, Shih-Ming ; Hsu, Yu-Cheng ; Chen, Cheng-Chung
Author_Institution
Inf.&Commun. Res. Labs., Hsinchu
fYear
2008
fDate
16-20 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
In this paper, we present one fully input and interstage matching class-AB power amplifier for WiMAX/WLAN (3.5GHz/2.45GHz) application. Each mode has its bias condition by the switching mechanism. Dual-band matching circuits are utilized to match the impedances and optimize the performance of each mode.
Keywords
III-V semiconductors; WiMax; gallium arsenide; high electron mobility transistors; power amplifiers; wireless LAN; AB power amplifier; GaAs enhancement-mode pHEMT; WiMAX/WLAN application; dual-band matching circuits; interstage matching class; switch-mode power amplifier; switching mechanism; Circuits; Dual band; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Radio frequency; WiMAX; Wireless LAN; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location
Macau
Print_ISBN
978-1-4244-2641-6
Electronic_ISBN
978-1-4244-2642-3
Type
conf
DOI
10.1109/APMC.2008.4958383
Filename
4958383
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