Title :
High linearity, current drivability and fmax using pseudomorphic GaAs double-heterojunction HEMT (DHHEMT)
Author :
Qun, Zheng Hai ; Ing, Ng Geok ; Qiang, Zhang Yun ; Radhakrishnan, K. ; Yan, Lee Kok ; Yong, Chee Peng ; Siu, Tse Man ; Xian, Weng Jun ; Fatt, Yoon Soon
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
We report the fabrication and characterization of pseudomorphic GaAs DHHEMTs. Higher current level and broader Gm-Id s characteristics can be obtained simultaneously using DHHEMTs compared to those of SHHEMTs. For 1.25 μm gate-length devices, the average fT is 12 GHz and fmax is greater than 50 GHz. The high linearity, current drivability and fmax show that DHHEMTs are attractive for applications such as wireless communication
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; microwave measurement; 1.25 micron; 12 GHz; Gm-Ids characteristics; GaAs; current drivability; current level; linearity; pseudomorphic double-heterojunction HEMT; wireless communication; Buffer layers; Carrier confinement; DH-HEMTs; Gallium arsenide; Gold; Helium; Indium gallium arsenide; Linearity; Lithography; Superlattices;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616441
