Modeling and characterization of 80 V LDMOSFET for RF communications

Author

Perugupalli, P. ; Trivedi, M. ; Shenai, K. ; Leong, S.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

fYear

1997

fDate

28-30 Sep 1997

Firstpage

92

Lastpage

95

Abstract

This paper presents the design and optimization of a 80 V LDMOSFET used in RF power amplifiers for cellular base station applications. SRP data from an experimental device was used to prototype the device using advanced 2-D process and device simulators. DC and RF characterization has been performed for the device. A proper match has been obtained between the measured and simulated data. A simple circuit model has been developed in which each of the components has been associated with the physical principles of device operation. A close match between the measured and modeled RF data has been reported

Keywords

UHF power amplifiers; cellular radio; land mobile radio; power MOSFET; power amplifiers; semiconductor device models; 2D simulation; 80 V; LDMOSFET; RF power amplifier; SRP; cellular base station; circuit model; design; device prototype; mobile communication; optimization; Base stations; Capacitance; Circuit simulation; Design optimization; Electric breakdown; Lead compounds; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Substrates; Virtual prototyping; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647364

Filename

647364