Title :
A broadband stacked power amplifier using 2-µm GaAs HBT process for C-band applications
Author :
Shen, Chih-Chun ; Huang, Fan-Hsiu ; Lin, Cheng-Kuo ; Chang, Hong-Yeh ; Chan, Yi-Jen ; Wang, Yu-Chi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
A broadband stacked power amplifier using 2-mum GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dual-stacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42%.
Keywords :
capacitors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; wideband amplifiers; C-band application; GaAs; broad bandwidth; broadband stacked power amplifier; common-base amplifier; common-emitter amplifier; dual-stacked circuit topology; frequency 2.4 GHz to 6 GHz; heterojunction bipolar transistors; maximum output power; optimized based terminal capacitor; saturation output power; size 2 mum; Bandwidth; Broadband amplifiers; Capacitors; Circuit topology; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Power generation; Radiofrequency amplifiers; Voltage; GaAs; HBT; power amplifier (PA); stacked power amplifier;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958388
