Title :
ESSDERC 2008 Proceedings of the 38th European solid-state device research conference
Abstract :
The following topics were dealt with: process variability and yield; reliability; high voltage devices; channel engineered devices; advanced analogue and radiofrequency devices; floating-gate and charge-trap NAND memories; SRAM and alternative nonvolatile memories; applied modelling techniques; process stability; fully depleted devices; carbon nanotubes; characterisation of advanced front-end materials and devices; device modelling; high frequency circuit components; optical detectors; transistor engineering; sensors and micromechanical devices; silicon devices; source and drain engineering.
Keywords :
analogue circuits; carbon nanotubes; integrated circuits; logic circuits; micromechanical devices; modelling; reliability; semiconductor devices; semiconductor technology; sensors; transistors; SRAM; advanced analogue devices; advanced front-end materials; advanced radiofrequency devices; carbon nanotubes; channel engineered devices; charge-trap NAND memories; device modelling; floating-gate memories; fully depleted devices; high frequency circuit components; high voltage devices; micromechanical devices; nonvolatile memories; optical detectors; process stability; process variability; reliability; sensors; silicon devices; source/drain engineering; transistor engineering; yield;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681677
