• DocumentCode
    3488662
  • Title

    Space-charge electrets as gate dielectrics in organic electronic devices

  • Author

    Schwödiauer, Reinhard ; Bauer, Siegfried ; Singh, Birendra ; Marjanovic, Nenad ; Sariciftci, Niyazi S.

  • Author_Institution
    Soft Matter Phys., Johannes Kepler Univ., Linz, Austria
  • fYear
    2005
  • fDate
    11-14 Sept. 2005
  • Firstpage
    459
  • Lastpage
    462
  • Abstract
    The basic element in organic electronics is the organic field effect transistor, consisting of an organic semiconductor and a gate dielectric. Whereas organic semiconductors are widely investigated, much less attention is paid for the search on organic gate dielectrics. Space-charge and dipole electrets offer a huge potential as gate dielectrics in organic field effect transistors. An example is the development of a nonvolatile organic field effect transistor memory based on fullerenes as molecular semiconductor and polyvinylalcohol as space-charge electret. In polyvinylalcohol, most probably mobile ions are the charge carriers that are trapped with long retention times. The memory element is characterized by a large metastable hysteresis in the transfer characteristics, the drain source current versus gate voltage. Improvements and even further going applications are possible by the use of better space-charge electrets.
  • Keywords
    dielectric devices; electrets; field effect transistors; organic semiconductors; space charge; charge carriers; dipole electrets; drain source current; gate voltage; metastable hysteresis; mobile ions; molecular semiconductor; nonvolatile memory; organic electronic devices; organic field effect transistor; organic gate dielectrics; organic semiconductor; polyvinylalcohol; space-charge electrets; Charge carriers; Dielectric devices; Electrets; Hysteresis; Metastasis; Nonvolatile memory; OFETs; Organic electronics; Organic semiconductors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 2005. ISE-12. 2005 12th International Symposium on
  • Print_ISBN
    0-7803-9116-0
  • Type

    conf

  • DOI
    10.1109/ISE.2005.1612424
  • Filename
    1612424