The impact of Ge profile shape on the operation of SiGe HBT precision voltage references

Author

Salmon, Stacey L. ; Cressler, John D. ; Jaeger, Richard C. ; Harame, David L.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1997

fDate

28-30 Sep 1997

Firstpage

100

Lastpage

103

Abstract

We analyze the effects of Ge grading on the bias and temperature characteristics of advanced UHV/CVD SiGe HBT´s. Theory, device measurements, and SPICE simulations are used to investigate the impact of the “Ge-ramp” effect on SiGe HBT precision voltage references. We conclude that conventional SPICE can be used to account for Ge ramp effects in SiGe HBT modeling. Given sufficient Ge grading, the Ge ramp effect can have a significant impact on the accuracy of precision voltage references and thus warrants attention

Keywords

Ge-Si alloys; SPICE; bipolar analogue integrated circuits; doping profiles; heterojunction bipolar transistors; reference circuits; semiconductor device models; semiconductor materials; Ge grading; Ge profile shape; Ge ramp effects; HBT precision voltage references; SPICE simulations; SiGe; SiGe HBT modeling; UHV/CVD SiGe HBT; bias characteristics; device measurements; temperature characteristics; Circuits; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; SPICE; Shape; Silicon germanium; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647366

Filename

647366