Title :
RCE PD array/CMOS optoelectronic integrate devices
Author :
Chen, HongDa ; Pei, WeiHua ; Deng, Hui ; Tang, Jun ; Du, Yun ; Wu, Ronghan
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
A high-density and high-performance optoelectronic integrated circuit (OEIC) is expected to be used in data communication in massively parallel processors of optical interconnects and optical switching networks. The most desirable optoelectronic integrated circuit is the state-of-the-art circuit, unaffected by the integration with optoelectronics. Some investigations on InGaAs/GaAs multiple quantum well resonance cavity enhanced photo detector (RCE PD) arrays for optoelectronic devices was reported.
Keywords :
CMOS integrated circuits; III-V semiconductors; cavity resonators; data communication; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; optical switches; parallel processing; photodetectors; semiconductor quantum wells; CMOS optoelectronic integrate devices; InGaAs-GaAs; InGaAs/GaAs; OEIC; data communication; multiple quantum wells; optical interconnects; optical switching networks; parallel processors; resonance cavity enhanced photo detector array; Communication switching; Data communication; Gallium arsenide; Indium gallium arsenide; Integrated optics; Optical fiber networks; Optical interconnections; Optoelectronic devices; Photonic integrated circuits; Switching circuits;
Conference_Titel :
Biophotonics/Optical Interconnects and VLSI Photonics/WBM Microcavities, 2004 Digest of the LEOS Summer Topical Meetings
Print_ISBN :
0-7803-8306-0
DOI :
10.1109/LEOSST.2004.1338707
