• DocumentCode
    3488999
  • Title

    Monolithic integration of CMOS VLSI and CNT for hybrid nanotechnology applications

  • Author

    Akinwande, Deji ; Yasuda, Shinichi ; Paul, Bipul ; Fujita, Shinobu ; Close, Gael ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    We integrate carbon nanotube (CNT) fabrication with commercial CMOS VLSI fabrication on a single substrate suitable for emerging hybrid nanotechnology applications. This co-integration combines the inherent advantages of CMOS and CNTs. These emerging applications include CNT optical, biological, chemical, and gas sensors that require complex CMOS electronics for sensor control, calibration, and signal processing of sensor output. We demonstrate the successful co-integration on a single chip with a vehicle circuit; a two transistor cascode megahertz amplifier utilizing both silicon nMOS and CNT transistors.
  • Keywords
    CMOS integrated circuits; VLSI; amplifiers; carbon nanotubes; elemental semiconductors; nanotube devices; silicon; C; CMOS; Si; VLSI; carbon nanotube; monolithic integration; silicon nMOS transistors; transistor cascode megahertz amplifier; vehicle circuit; Biosensors; Carbon nanotubes; Chemical and biological sensors; Gas detectors; Monolithic integrated circuits; Nanotechnology; Optical device fabrication; Optical sensors; Optical signal processing; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
  • Conference_Location
    Edinburgh
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-2363-7
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2008.4681706
  • Filename
    4681706