DocumentCode
3488999
Title
Monolithic integration of CMOS VLSI and CNT for hybrid nanotechnology applications
Author
Akinwande, Deji ; Yasuda, Shinichi ; Paul, Bipul ; Fujita, Shinobu ; Close, Gael ; Wong, H. -S Philip
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
91
Lastpage
94
Abstract
We integrate carbon nanotube (CNT) fabrication with commercial CMOS VLSI fabrication on a single substrate suitable for emerging hybrid nanotechnology applications. This co-integration combines the inherent advantages of CMOS and CNTs. These emerging applications include CNT optical, biological, chemical, and gas sensors that require complex CMOS electronics for sensor control, calibration, and signal processing of sensor output. We demonstrate the successful co-integration on a single chip with a vehicle circuit; a two transistor cascode megahertz amplifier utilizing both silicon nMOS and CNT transistors.
Keywords
CMOS integrated circuits; VLSI; amplifiers; carbon nanotubes; elemental semiconductors; nanotube devices; silicon; C; CMOS; Si; VLSI; carbon nanotube; monolithic integration; silicon nMOS transistors; transistor cascode megahertz amplifier; vehicle circuit; Biosensors; Carbon nanotubes; Chemical and biological sensors; Gas detectors; Monolithic integrated circuits; Nanotechnology; Optical device fabrication; Optical sensors; Optical signal processing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location
Edinburgh
ISSN
1930-8876
Print_ISBN
978-1-4244-2363-7
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2008.4681706
Filename
4681706
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