DocumentCode :
3489033
Title :
Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements
Author :
Goh, Y.H. ; Ling, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fYear :
1996
fDate :
26-28 Nov 1996
Firstpage :
23
Lastpage :
27
Abstract :
The forward gated-diode drain current characterized at low drain voltages and charge pumping current measurements are applied to PMOSFETs for investigating hot-carrier induced defects in the device. A linear relationship between the post-stress forward gated-diode drain current peaks and the corresponding charge pumping current peaks is obtained. Trapping of negative charge and generation of interface traps alter stress may be deduced from the gated-diode drain current characteristics. Logarithmic time degradation is observed from measurement of the increase in the forward gated-diode drain current peaks after stress
Keywords :
MOSFET; electric current measurement; electron traps; hot carriers; interface states; semiconductor device reliability; PMOSFET; charge pumping current measurements; drain voltages; hot carrier degradation study; interface traps; logarithmic time degradation; negative charge trapping; post-stress forward gated-diode drain current peaks; Charge measurement; Charge pumps; Current measurement; Degradation; Electron traps; Hot carriers; MOSFET circuits; Radiative recombination; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
Type :
conf
DOI :
10.1109/SMELEC.1996.616444
Filename :
616444
Link To Document :
بازگشت